The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-14] Ohmic Contact Formation on β-Ga2O3 Using Sn Ion Implantation

○Kohei Sasaki1,2, Masataka Higashiwaki2,3, Akito Kuramata1, Takekazu Masui4, Shigenobu Yamakoshi1 (Tamura Corp.1, NICT2, JST PRESTO3, Koha Co., Ltd.4)

Keywords:Ga2O3、酸化ガリウム、酸化ガリウム