The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-15] Al2O3/n-Ga2O3 MOS diodes

○Masataka Higashiwaki1,2, Krishnamurthy Daivasigamani1, Kohei Sasaki1,3, Akito Kuramata3, Takekazu Masui4, Shigenobu Yamakoshi3 (NICT1, JST PRESTO2, Tamura Corp.3, Koha Co., Ltd.4)

Keywords:Ga2O3、ダイオード、MOS