[28p-G11-1~18] 14.3 Electron devices and Process technology

[28p-G11-16] ▲Oxide Thickness Dependency on Threshold Voltage of GaN MOSFETs on AlGaN/GaN Heterostructure

^○(D)Qingpeng Wang^1,2, Ying Jiang^1,2, Kentaro Tamai¹, Takahiro Miyashita³, Shin-ichi Motoyama³, Dejun Wang², Jin-Ping Ao¹, Yasuo Ohno¹ (The Univ. of Tokushima¹, Dalian Univ. of Tech.², SAMCO Inc.³)

Keywords:GaN MOSFETs、thickness dependency、threshold voltage