[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-2] Homoepitaxial growth of ZnO films grown using high-energy H₂O generated by a catalytic reaction

^○Tomohiko Takeuchi¹, Eichi Nagatomi¹, Naoya Yamaguchi¹, Takahiro Kato¹, Kanji Yasui¹ (Nagaoka. Univ. Technol.¹)

Keywords:触媒反応生成高エネルギーH₂O、ホモエピタキシャル成長