[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-5] Effect of annealing on ZnO single-crystalline layer grown on a-plane Al₂O₃ substrate by sputter epitaxy (II)

^○Yuuki Hamada¹, Masayuki Takahashi¹, Hirotoyo Shigeno¹, Hidetaka Tanuma¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki University¹)

Keywords:ZnO