△Thermal stability of Metal/High-k/GeO<sub>2</sub>/Ge stacks fabricated by MBD method

Iori Hideshima

Presentation information

Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[28p-G2-1~16] 13.3 Insulator technology

Thu. Mar 28, 2013 2:30 PM - 6:45 PM G2 (B5 1F-2102)

[28p-G2-10] △Thermal stability of Metal/High-k/GeO₂/Ge stacks fabricated by MBD method

^○（M2）Iori Hideshima¹, Ryouhei Tanaka¹, Yuya Minoura¹, Akitaka Yoshigoe², Yuuden Teraoka², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka University¹, JAEA²)

Keywords:ゲルマニウム、MOS、Metal/High-k

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Presentation information

[28p-G2-1~16] 13.3 Insulator technology

[28p-G2-10] △Thermal stability of Metal/High-k/GeO2/Ge stacks fabricated by MBD method

[28p-G2-10] △Thermal stability of Metal/High-k/GeO₂/Ge stacks fabricated by MBD method