The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[28p-G2-1~16] 13.3 Insulator technology

Thu. Mar 28, 2013 2:30 PM - 6:45 PM G2 (B5 1F-2102)

[28p-G2-9] △AlN/Ge MIS Gate Stacks by High-pressure Inert-gas Annealing

○（DC）Toshiyuki Tabata1, Kousuke Nagashio1, Akira Toriumi1 (The University of Tokyo1)

Keywords:Ge、high-k、AlN