Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOX-interlayer

Yuta Nagatomi

Presentation information

Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[28p-G2-1~16] 13.3 Insulator technology

Thu. Mar 28, 2013 2:30 PM - 6:45 PM G2 (B5 1F-2102)

[28p-G2-16] Low-temperature fabrication of Y₂O₃/Ge gate stacks with ultrathin GeO_X-interlayer

^○Yuta Nagatomi¹, Syuta Kojima¹, Syo Kamezawa¹, Keisuke Yamamoto^2,3, Dong Wang¹, Hiroshi Nakashima² (I-Eggs, Kyushu Univ.¹, KASTEC, Kyushu Univ.², JSPS Research Fellow³)

Keywords:Ge、Y₂O₃、Gatestacks

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Presentation information

[28p-G2-1~16] 13.3 Insulator technology

[28p-G2-16] Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOX-interlayer

[28p-G2-16] Low-temperature fabrication of Y₂O₃/Ge gate stacks with ultrathin GeO_X-interlayer