[28p-G2-1~16] 13.3 Insulator technology

Thu. Mar 28, 2013 2:30 PM - 6:45 PM G2 (B5 1F-2102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G2-0] Lunch(75min)

[28p-G2-1] ▲High Mobility Ge CMOS devices with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation

^○Rui Zhang¹, Ju-Chin Lin¹, Po-Chin Huang¹, Noriyuki Taoka^1,2, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹, Univ. Nagoya²)

[28p-G2-2] Planarization of Ge(111) Surface by H₂ Annealing

^○Tomonori Nishimura^1,2, Choong Hyun Lee^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

[28p-G2-3] Investigation of interface reaction between metal electrode and GeO2 dielectric by Cs-corrected STEM-EELS

^○Shingo Ogawa^{1, 2}, Iori Hideshima², Yuya Minoura², Kosuke Kimura¹, Naohiko Kawasaki¹, Asami Yasui¹, Hiroaki Miyata¹, Takashi Yamamoto¹, Takuji Hosoi², Takayoshi Shimura², Heiji Watanabe² (Toray Research Center Inc.¹, Graduate School of Engineering, Osaka University²)

[28p-G2-4] Accurate characterization of interface-state densities for Ge-MOS capacitors

^○Hiroshi Nakashima¹, Dong Wang², Keisuke Yamamoto^1,3 (Kyushu Univ. KASTEC¹, Kyushu Univ. I-EggS², JSPS research fellow³)

[28p-G2-5] Variation of Water Solubility of GeO₂ Thin Films Using Post Metallization Annealing

^○Marina Yamaguchi¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tonyo Univ. of Agri. & Tech.¹)

[28p-G2-6] ▲Thermal annealing effect on the quality of GeO2 film formed by radical oxidation of Ge

^○Woojin Song^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The University of Tokyo¹, JST-CREST²)

[28p-G2-7] 1.2 nm EOT of Ge/GeO2 Stack with Low Temperature High-Pressure Oxidation

^○Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Toshiyuki Tabata^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (University of Tokyo¹, JST-CREST²)

[28p-G2-8] Inspection of Introduction GeN_x Diffusion Barrier Film to HfO₂/Ge Interface

^○Yohma Kuroyanagi¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ.of Agri.&Tech.¹)

[28p-G2-8.1] Break(15min)

[28p-G2-9] △AlN/Ge MIS Gate Stacks by High-pressure Inert-gas Annealing

^○（DC）Toshiyuki Tabata¹, Kousuke Nagashio¹, Akira Toriumi¹ (The University of Tokyo¹)

[28p-G2-10] △Thermal stability of Metal/High-k/GeO₂/Ge stacks fabricated by MBD method

^○（M2）Iori Hideshima¹, Ryouhei Tanaka¹, Yuya Minoura¹, Akitaka Yoshigoe², Yuuden Teraoka², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka University¹, JAEA²)

[28p-G2-11] △Correlation between Interface Structures due to Thermal Oxidation and Interface Properties at Al₂O₃/Ge Interfaces

^○Shigehisa Shibayama¹, Kimihiko Kato^1,2, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, Research Fellow of Japan Society for the Promotion of Science²)

[28p-G2-12] △Formation of Al₂O₃/GeO_x/Ge structure Using Low-Temperature and Damage-Free Neutral-Beam Oxidation Process

^○Akira Wada^1,2, Daiki Nakayama¹, Rui Zhang³, Shinichi Takagi³, Seiji Samukawa^1,4 (IFS, Tohoku Univ.¹, μSIC, Tohoku Univ.², Dept. Eng., Univ. of Tokyo³, WPI-AIMR, Tohoku Univ.⁴)

[28p-G2-13] ▲Mobility Degradation of Ge MOSFETs in High Ns Region due to Interface States inside Conduction and Valence Bands of Ge

^○（P）Rui Zhang¹, Po-Chin Huang¹, Ju-Chin Lin¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

[28p-G2-14] ▲Improvement of High Ns Mobility of Ge MOSFETs by Reducing GeO_x/Ge Interface Roughness

^○（P）Rui Zhang¹, Po-Chin Huang¹, Ju-Chin Lin¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

[28p-G2-15] Dominant factor of Ge Schottky Diode Resistivity on Insulator Thickness

^○Toshimitsu Nakamura¹, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

[28p-G2-16] Low-temperature fabrication of Y₂O₃/Ge gate stacks with ultrathin GeO_X-interlayer

^○Yuta Nagatomi¹, Syuta Kojima¹, Syo Kamezawa¹, Keisuke Yamamoto^2,3, Dong Wang¹, Hiroshi Nakashima² (I-Eggs, Kyushu Univ.¹, KASTEC, Kyushu Univ.², JSPS Research Fellow³)

Session information

[28p-G2-1~16] 13.3 Insulator technology