[28p-G2-1~16] 13.3 Insulator technology

[28p-G2-3] Investigation of interface reaction between metal electrode and GeO2 dielectric by Cs-corrected STEM-EELS

^○Shingo Ogawa^{1, 2}, Iori Hideshima², Yuya Minoura², Kosuke Kimura¹, Naohiko Kawasaki¹, Asami Yasui¹, Hiroaki Miyata¹, Takashi Yamamoto¹, Takuji Hosoi², Takayoshi Shimura², Heiji Watanabe² (Toray Research Center Inc.¹, Graduate School of Engineering, Osaka University²)

Keywords:GeO2、STEM