[28p-G2-1~16] 13.3 Insulator technology

[28p-G2-7] 1.2 nm EOT of Ge/GeO2 Stack with Low Temperature High-Pressure Oxidation

^○Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Toshiyuki Tabata^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (University of Tokyo¹, JST-CREST²)

Keywords:Germanium