The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[28p-G21-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 28, 2013 3:45 PM - 7:00 PM G21 (B5 4F-2405)

[28p-G21-6] GaN growth on graphene/Si (100) substrate by RF-MBE

○Tsutomu Araki1, Junichi Sakaguchi1, Satoru Uchimura1, Yasushi Nanishi2,3, Tatsuya Fujishima4, Tomás Palacios4, Amaia Zurutuza5 (Ritsumeikan Univ.1, R-GIRO2, Seoul National Univ.3, Massachusetts Inst. of Tech.4, Graphenea5)

Keywords:MBE、GaN、グラフェン