△Relation between Z<sub>1/2</sub> center and the charge collection efficiency of SiC high-energy particle detectors

Naoya Iwamoto

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

[28p-G22-1~19] 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

[28p-G22-13] △Relation between Z_1/2 center and the charge collection efficiency of SiC high-energy particle detectors

^○（PC）Naoya Iwamoto¹, Brett Johnson¹, Norihiro Hoshino², Masahiko Ito², Hidekazu Tsuchida², Kazutoshi Kojima³, Takeshi Ohshima¹ (JAEA¹, CRIEPI², AIST³)

Keywords:SiC、検出器、欠陥

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Presentation information

[28p-G22-1~19] 15.6 IV-group-based compounds

[28p-G22-13] △Relation between Z1/2 center and the charge collection efficiency of SiC high-energy particle detectors

[28p-G22-13] △Relation between Z_1/2 center and the charge collection efficiency of SiC high-energy particle detectors