▼Impacts of hydrogen annealing induced mobile ions on thermal SiO<sub>2</sub>/SiC interface property

Atthawut Chanthaphan

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

[28p-G22-1~19] 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

[28p-G22-2] ▼Impacts of hydrogen annealing induced mobile ions on thermal SiO₂/SiC interface property

^○（D）Atthawut Chanthaphan¹, Shuhei Mitani², Yuki Nakano², Takashi Nakamura², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka University¹, ROHM CO., LTD.²)

Keywords:SiC、MOS、mobile ion

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Presentation information

[28p-G22-1~19] 15.6 IV-group-based compounds

[28p-G22-2] ▼Impacts of hydrogen annealing induced mobile ions on thermal SiO2/SiC interface property

[28p-G22-2] ▼Impacts of hydrogen annealing induced mobile ions on thermal SiO₂/SiC interface property