Characterization of non-radiative recombination centers in InGaN quantum well by two-wavelength excited photoluminescence

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Thu. Mar 28, 2013 2:00 PM - 6:00 PM G5 (B5 1F-2105)

^○Naoki Murakoshi¹, Islam Touhidul¹, Takeshi Fukuda¹, Norihiko Kamata¹, Yasuhiko Arakawa² (Saitama Univ.¹, *Univ. Tokyo²)

Keywords:フォトルミネッセンス、量子井戸