[28p-G5-1~15] 14.4 Optical properties and light-emitting devices

[28p-G5-10] Near-infrared luminescence properties of bismuth-doped silicon oxynitride thin films

^○Shohei Kitano¹, Satoshi Morimoto¹, Minoru Fujii¹, Hong-Tao Sun², Kenji Imakita¹, Jianrong Qui³, Shinji Hayashi¹ (Kobe Univ.¹, NIMS², Zhejiang Univ.³)

Keywords:発光デバイス、ビスマス、薄膜