Clarification of inducement mechanism of low electron barrier for a TiN/Ge contact

Keisuke Yamamoto

Presentation information

Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.5 Si process technology

[28p-G6-1~17] 13.5 Si process technology

Thu. Mar 28, 2013 2:00 PM - 6:30 PM G6 (B5 1F-2106)

[28p-G6-7] Clarification of inducement mechanism of low electron barrier for a TiN/Ge contact

^○Keisuke Yamamoto^1,3, Masatoshi Mitsuhara², Minoru Nishida², Dong Wang², Hiroshi Nakashima¹ (Kyushu Univ. KASTEC¹, Kyushu Univ. I-EggS², JSPS research fellow³)

Keywords:Ge、SBH

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