[28p-G7-1~13] 13.7 Simulation

[28p-G7-8] SOI MOSFET with Good Subthreshold Slope Using Substrate Bias and PD/FD Transition

^○（M2）You Kurosaki¹, Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹)

Keywords:SOI、MOSFET、Subthreshold