[28p-G9-1~18] 13.6 Silicon devices / Integration technology

[28p-G9-14] Suppressing FinFET variability using amorphous metal gate

^○Takashi Matsukawa¹, Yongxun Liu¹, Wataru Mizubayashi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Kazuhiko Endo¹, Yuki Ishikawa¹, Shinichi O'uchi¹, Hiroyuki Ota¹, Shinji Migita¹, Yukinori Morita¹, Meishoku Masahara¹ (AIST¹)

Keywords:FinFET、特性ばらつき、非晶質金属