[28p-G9-1~18] 13.6 Silicon devices / Integration technology

[28p-G9-17] △Impact of Deformation Potential Increase at MOS Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFETs

^○Teruyuki Ohashi^1,2, Shunri Oda³, Ken Uchida^1,2 (Dept. of Physical Electronics, Tokyo Inst. of Tech.¹, Dept. of Electrical and Electronics Engineering², QNERC, Tokyo Inst. of Tech.³)

Keywords:ナノ、歪み、シリコン