[28p-PA2-1~4] 15.5 IV-group crystals and IV-IV-group mixed crystals

[28p-PA2-3] Dependence of deposition rate on characteristics of Ge quantum dots grown on Si (001) substrate

^○（M2）Kazuhiro Gotoh^1,2, Ryuji Oshima², Takeyoshi Sugaya², Isao Sakata², Koji Matsubara², Michio Kondo^1,2 (Tokyo Tech¹, AIST²)

Keywords:量子ドット、ヘテロエピタキシー