[29a-B4-1~11] 5.1 Semiconductor laser, Light emitter / Photodetector

[29a-B4-3] Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates

^○Kohei Miura^1,2, Yasuhiro Iguchi¹, Yuuichi Kawamura², Junpei Murooka³, Haruyoshi Katayama³, Shota Kanno⁴, Tomoko Takekawa⁴, Masafumi Kimata⁴ (Sumitomo Electric Industries, Ltd.¹, Osaka Prefecture Univ.², Japan Aerospace Exploration Agency³, Ritsumeikan Univ.⁴)

Keywords:ＩｎＡｓ／ＧａＳｂ超格子、ＩｎＰ、分子線エピタキシー