△Characterization of MOCVD-grown InP/GaAsSb/InP DHBTs with a thin GaAs spacer

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 9:30 AM - 11:30 AM G11 (B5 2F-2205)

^○Takuya Hoshi¹, Norihide Kashio¹, Hiroki Sugiyama¹, Haruki Yokoyama¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (NTT Photonics Labs.¹)

Keywords:ヘテロ接合バイポーラトランジスタ、GaAsスペーサ層、有機金属化学気相堆積