△Fabrication of InGaAs-HEMTs with 50-nm T-gates by multi-layer SiCN molds

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 9:30 AM - 11:30 AM G11 (B5 2F-2205)

^○Tomohiro Yoshida¹, Kengo Kobayashi¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹)

Keywords:HEMT、InGaAs、T-gate