The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29a-G19-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 29, 2013 10:00 AM - 12:45 PM G19 (B5 4F-2403)

[29a-G19-1] Annealing effects of impurities-doped ZnO films using DEZ solution by spray method

Akiko Ide1, Ayako Nagano1, Minoru Oshima1, Kenji Yoshino1,3, Yujin Takemoto2, Koji Toyota2, Koichro Inaba2, Ken-ichi Haga2, Toshio Naka2, Kohichi Tokudome2 (Univ. Miyazaki1, Tosoh Finechem2, JST-CREST3)

Keywords:ZnO、透明導電膜、スプレー