[29a-G21-1~11] 15.4 III-V-group nitride crystals

[29a-G21-4] Tensile strain induced formation of micro-cracks for AlGaN/GaN HEMT structures

^○Junji Kotani¹, Shuichi Tomabechi¹, Toyoo Miyajima¹, Norikazu Nakamura¹, Toshihide Kikkawa¹, Keiji Watanabe¹, Kenji Imanishi¹ (Fujitsu Lab.¹)

Keywords:MOVPE、AlGaN/GaN、マイクロクラック