△Optimal Growth Pressure for High Quality Semipolar AlN (1102) Homoepitaxial Films

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 29, 2013 9:00 AM - 12:00 PM G21 (B5 4F-2405)

^○Shuhei Ichikawa¹, Mitsuru Funato¹, Shunro Nagata², Yoichi Kawakami¹ (Kyoto Univ.¹, JFE Mineral Co. Ltd.²)

Keywords:半極性面、AlN、成長