The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[29a-G21-1~11] 15.4 III-V-group nitride crystals

Fri. Mar 29, 2013 9:00 AM - 12:00 PM G21 (B5 4F-2405)

[29a-G21-7] △Influence of dislocation density on Si-doped AlN grown by MOVPE

○Gou Nishio1, Hideto Miyake1, Kazumasa Hiramatsu1 (Mie Univ.1)

Keywords:MOVPE、AlN、Doping