[29a-G9-1~11] 13.6 Silicon devices / Integration technology

[29a-G9-2] Study of Tunneling Mechanism in TFETs : Temperature Dependence of Subthreshold Characteristics

^○Takahiro Mori¹, Noriyuki Miyata¹, Kouichi Fukuda¹, Yukinori Morita¹, Tatsurou Maeda¹, Shin-ichi O'uchi¹, Yongxun Liu¹, Meishoku Masahara¹, Tetsuji Yasuda¹, Hiroyuki Ota¹ (GNC-AIST¹)

Keywords:トンネルトランジスタ