[29a-G9-1~11] 13.6 Silicon devices / Integration technology

[29a-G9-8] ▲Trapping and Detrapping of Carriers by Individual Dopants
in Lateral Nanoscale p-n Junctions

^○（D）Sri Purwiyanti^1,2, Daniel Moraru¹, Takeshi Mizuno¹, Djoko Hartanto², Michiharu Tabe¹ (Research Institute of Electronics, Shizuoka University¹, Faculty of Engineering, University of Indonesia²)

Keywords:individual dopant、nanoscale p-n junction