The 60th JSAP Spring Meeting,2013

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Regular sessions(Poster presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[29a-PB7-1~21] 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 9:30 AM - 11:30 AM PB7 (2nd gymnasium)

[29a-PB7-17] Effects of the post growth annealing on the electronic properties of impurity doped InGaAsN films

○Kenjiro Uesugi1, Shigeyuki Kuboya1, Sanorpim Sakuntam2, Kentaro Onabe1 (Dept. of Adv. Mat. Sci., The Univ. of Tokyo1, Chulalongkorn Univ.2)

Keywords:InGaAsN