[29a-PB7-1~21] 15.3 III-V-group epitaxial crystals

[29a-PB7-3] The growth of Ga0.2In0.8As QDs on direct wafer bonded InP-to-silicon substrate

^○（M1）xinxin zhang¹, Keiichi Matsumoto¹, Yoshinori Kaneya¹, Kazuhiko Shimomura¹ (sophia univ.¹)

Keywords:貼付