[29a-PB7-1~21] 15.3 III-V-group epitaxial crystals

[29a-PB7-5] Effect of spacer layer thickness in multiple stack high density InGaAsN/GaP quantum dots

^○Noriyuki Urakami¹, Hironari Ito¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara¹ (Toyohashi Tech¹, Toyohashi Tech. EIIRIS²)

Keywords:量子ドット、半導体