[29a-PB7-1~21] 15.3 III-V-group epitaxial crystals

[29a-PB7-7] △Self-formation of ultrahigh density InAs quantum dots (10¹² cm^-2) on InAsSb layers

^○Takuya Sano¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

Keywords:自己形成量子ドット、超高密度、InAsSb/GaAs