[29p-B2-1~18] 7.6 Ion beams

[29p-B2-12] △Planarization of films under MTJ with GCIB irradiation

^○Akira Yamaguchi¹, Ryo Hinoura¹, Noriaki Toyoda¹, Ken-ichi Hara², Isao Yamada¹ (Graduate school of engineering, Univ. of Hyogo¹, Tokyo Electron²)

Keywords:磁気トンネル接合素子, ガスクラスターイオンビーム, 磁気抵抗メモリ, 平坦化