[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[29p-G16-14] Effect of oxygen concentration in subsurface layer on the bending strength of silicon wafers

^○Haruo Sudo¹, Tatsuhiko Aoki¹, Koji Araki¹, Hiromi Hidaka¹, Nobue Araki¹, Koji Izunome¹, Nakamura Yoshiaki², Akira Sakai² (GlobalWafers Japan¹, Osaka Univ.²)

Keywords:Siウェーハ、曲げ強度、酸素濃度