[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[29p-G16-16] Enhancing effect of dislocation velocity in SiGe/ Si by Sb doping

^○Tatsuya Fushimi¹, Takuya Matsunaga¹, Yoshifumi Yamashita¹, Yutaka Ohno², Ichiro Yonenaga² (Graduate School of Natural Sci. and Tech., Okayama Univ.¹, Institute of Materials Research, Tohoku Univ.²)

Keywords:転位、SiGe