Regular sessions(Poster presentation)

[28p-PA3-1~5] 15.8 Crystal evaluation, nanoimpurities and crystal defects

Thu. Mar 28, 2013 1:30 PM - 3:30 PM PA3 (1st gymnasium)

Poster Session 13:30〜15:30(PA)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

[28p-PA3-1] Molecular dynamics calculation on formation of void defects in Si and Ge crystals.

^○（M1）Shusaku Ota¹, Koji Sueoka¹ (Okayama prefectural univ.¹)

[28p-PA3-2] In-plane distribution of trap in n-type 4H-SiC studied by Schottky probe using Ag/nano-Ag mixture paste

^○Honda Unhi¹, Souda Yoshinori¹, Furukawa Hiroyuki¹, Tokuda Yutaka¹, Ito Jyoji², Sakane Hitoshi² (Aichi Inst. of Technol.¹, S. H. I. Examination & Inspection, Ltd.²)

[28p-PA3-3] Reduction of the dislocation density of GaN substrates by double pulse laser annealing (DPLA)

^○Mariko Fujieda¹, Takamasa Ishii¹, Takeaki Sakurai¹, Takashi Sekiguchi², Katsuhiro Akimoto¹ (Univ.of Tsukuba¹, NIMS²)

[28p-PA3-4] The evaluation of lattice displacement in hydrogen-ion implanted ZnO bulk single crystals by Rutherford backscattering spectrometry

^○（B）Takuya Kaida¹, Kazuma Kamioka¹, Takahiro Ida¹, Kazuo Kuriyama¹, Kazumasa Kushida² (Hosei Univ.¹, Osaka kyouiku Univ.²)

[28p-PA3-5] Electron spin resonance measurement of sapphire for KAGRA mirrors

^○（M1）Nobuhiro Fukumoto¹, Yukinori Ono², Masahiro Hori², Shigenori Moriwaki¹, Norikatsu Mio¹ (Univ. of Tokyo¹, Univ. of Toyama²)

Regular sessions(Oral presentation)

[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects

Fri. Mar 29, 2013 1:30 PM - 7:15 PM G16 (B5 3F-2304)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

[29p-G16-1] Objection to a Simulation for Intrinsic Point Defects in Silicon Crystals during Melt Growth

^○Takao Abe¹, Toru Takaha¹, Koun Shirai² (Shinetsu Handotai¹, Osaka Univ.²)

[29p-G16-2] Effects of pulling velocity of crystal growth from melt on temperature gradient

^○Koun Shirai¹, Takao Abe² (ISIR, Osaka Univ.¹, Shin-Etsu Handoutai²)

[29p-G16-3] An investigation of the effect of thermal stress on defect formation in crystal growth of silicon from melt

^○Koun Shirai¹, Takao Abe² (ISIR, Osaka Univ.¹, Shin-Etsu Handoutai²)

[29p-G16-4] Comparison of the formation energy of uncharged intrinsic point defects in Si and Ge

^○Eiji Kamiyama¹, Koji Sueoka¹ (Okayama Pref. Univ.¹)

[29p-G16-5] Vacancy formation energies in Si crystals doped with atoms of groups 3, 4 and 5

^○Masashi Suezawa¹, Kaihei Inoue¹, Yosiaki Iijima¹, Naoki Fukata¹, Ichiro Yonenaga¹ (I. M. R., Tohoku Univ.¹)

[29p-G16-6] Effect of dopants on intrinsic point defect concentration in growing single crystal Si (2)

^○Koji Sueoka¹, Eiji Kamiyama¹ (Okayama Pref. Univ¹)

[29p-G16-6.1] Break(15min)

[29p-G16-7] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (5) Quantitative analysis of irradiation and annealing of carbon-rich sample

^○Naohisa Inoue¹, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. & Technol.¹, Toyota Motor Co.², Toray Research Center³, Systems Engineering Inc.⁴, Osaka Pref. Univ.⁵)

[29p-G16-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (6) Detection limit down to 1E-6 peak absorbance

^○Naohisa Inoue^1,5, Hirofumi Seki², Takao Sugaya³, Shigeru Shimada⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. Technol.¹, Toray Research Center², Systems Engineering Inc.³, Bruker Otics KK⁴, Osaka Pref. Univ.⁵)

[29p-G16-9] First-principles calculation on interaction of dopant-point defect complex and metal atom in Si crystal

^○（M2）Takeshi Iwasaki¹, Koji Sueoka¹, Jun Komachi², Koichiro Saga² (Okayama Pref. Univ.¹, Sony Corporation²)

[29p-G16-10] △First-Principles Analysis on Vacancy-Type Defects Introduced by Ion Implantation

^○Takahiro Maeta^1.2, Koji Sueoka¹, Koji Izunome² (Okayama Pref. Univ.,Dept. of System Engineering¹, GlobalWafers Japan Co., Ltd.²)

[29p-G16-11] First-Principles Analysis on Gettering of Metallic Impurities by Microscopic Defects

^○Takahiro Maeta¹, Koji Sueoka¹, Koji Izunome² (Okayama Pref. Univ.,Dept. of System Engineering¹, GlobalWafers Japan Co., Ltd.²)

[29p-G16-12] In-Diffusion and Annealing of Nickel in Dislocation-Free n-Type Silicon

^○Shuji Tanaka¹, Seiji Takami¹, Takuya Mitoma¹, Koitirou Noguti¹ (Fukuoka Institute of Technology¹)

[29p-G16-13] △Dislocation behavior in device active area of surface-oxygen-concentration controlled Si wafers

^○（B）Hirotada Asazu¹, Shotaro Takeuchi¹, Hiroya Sannai¹, Haruo Sudo², Koji Araki², Yoshiaki Nakamura^1,3, Koji Izunome², Akira Sakai¹ (Osaka Univ.¹, GlobalWafers Japan Co.,Ltd.², PRESTO-JST³)

[29p-G16-14] Effect of oxygen concentration in subsurface layer on the bending strength of silicon wafers

^○Haruo Sudo¹, Tatsuhiko Aoki¹, Koji Araki¹, Hiromi Hidaka¹, Nobue Araki¹, Koji Izunome¹, Nakamura Yoshiaki², Akira Sakai² (GlobalWafers Japan¹, Osaka Univ.²)

[29p-G16-14.1] Break(15min)

[29p-G16-15] ▲Spatial Distribution of Crystal Defects and Their Impact on Electrical Properties in Multicrystalline Si

^○（P）Supawan Joonwichien¹, satoru matsushima¹, haruna watanabe¹, Noritaka Usami¹ (Institute for Materials Research, Tohoku Univ.¹)

[29p-G16-16] Enhancing effect of dislocation velocity in SiGe/ Si by Sb doping

^○Tatsuya Fushimi¹, Takuya Matsunaga¹, Yoshifumi Yamashita¹, Yutaka Ohno², Ichiro Yonenaga² (Graduate School of Natural Sci. and Tech., Okayama Univ.¹, Institute of Materials Research, Tohoku Univ.²)

[29p-G16-17] △First-Principles Analysis on Interaction of Dopant and Contamination Metal Atoms in Ge Crystals

^○（M1）Tatsunori Yamato¹, Koji Sueoka¹, Takahiro Maeta² (Okayama Pref. Univ.,Dept. of System Engineering¹, GlobalWafers Japan Co.,Ltd.²)

[29p-G16-18] Surface-induced charge at Ge(100) dimer surface and its interaction with point defects