[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[29p-G16-6] Effect of dopants on intrinsic point defect concentration in growing single crystal Si (2)

^○Koji Sueoka¹, Eiji Kamiyama¹ (Okayama Pref. Univ¹)

Keywords:点欠陥、育成中Si単結晶、第一原理計算