[28p-PA3-1~5] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[28p-PA3-2] In-plane distribution of trap in n-type 4H-SiC studied by Schottky probe using Ag/nano-Ag mixture paste

^○Honda Unhi¹, Souda Yoshinori¹, Furukawa Hiroyuki¹, Tokuda Yutaka¹, Ito Jyoji², Sakane Hitoshi² (Aichi Inst. of Technol.¹, S. H. I. Examination & Inspection, Ltd.²)

Keywords:SiC、DLTS