[29p-G16-9] First-principles calculation on interaction of dopant-point defect complex and metal atom in Si crystal
Keywords:点欠陥、ゲッタリング、第一原理計算
Regular sessions(Oral presentation)
15. Crystal Engineering » 15.8 Crystal evaluation, nanoimpurities and crystal defects
Fri. Mar 29, 2013 1:30 PM - 7:15 PM G16 (B5 3F-2304)
Keywords:点欠陥、ゲッタリング、第一原理計算