[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[29p-G16-5] Vacancy formation energies in Si crystals doped with atoms of groups 3, 4 and 5

^○Masashi Suezawa¹, Kaihei Inoue¹, Yosiaki Iijima¹, Naoki Fukata¹, Ichiro Yonenaga¹ (I. M. R., Tohoku Univ.¹)

Keywords:空孔形成エネルギー、シリコン結晶、不純物