[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-16] ZnO thin film transistors fabricated by PLD technique with bias voltage application

^○Yuya Abukawa¹, Takao Komiyama¹, Yasunori Chonan¹, Hiroyuki Yamaguchi¹, Takashi Aoyama¹ (Akita Prefectural Univ.¹)

Keywords:薄膜トランジスタ、酸化亜鉛、化学量論比