The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 29, 2013 2:00 PM - 6:30 PM G19 (B5 4F-2403)

[29p-G19-8] High Mobility IGZO TFT Fabricated by Atmospheric Pressure Mist CVD

○（PC）Toshiyuki Kawaharamura1, Takayuki Uchida2, Dapeng Wang1, Masaru Sanada2, Mamoru Furuta1 (Inst. for Nanotechnology, Kochi Univ. of Tech.1, School of Sys. Eng., Kochi Univ. of Tech.2)

Keywords:酸化インジウムガリウム亜鉛薄膜トランジスタ、ミスト化学気相成長法、高移動度化