The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[29p-G7-1~19] 14.1 Physical properties of exploratory materials

Fri. Mar 29, 2013 1:00 PM - 6:00 PM G7 (B5 2F-2201)

[29p-G7-13] △Microstructure analysis of β-FeSi2 film by MOCVD method on Si with Ag layer

Shunichi Motomura1, Kouhei Hayashi1, Masaru Itakura1, Kensuke Akiyama2 (Kyushu University1, Kanagawa Ind. Tech Center2)

Keywords:鉄シリサイド、電子顕微鏡