Regular sessions(Poster presentation)

[28p-PB2-1~10] 14.1 Physical properties of exploratory materials

Thu. Mar 28, 2013 4:00 PM - 6:00 PM PB2 (2nd gymnasium)

Poster Session 16:00〜18:00(PB)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-PB2-1] A study on electrical characteristics of metal /n⁺diamond contacts with high-dose impurities at the interface

^○Atushi Takemasa¹, Yuuki Tanaka¹, Kuniyuki Takushima², Parhat Ahmet¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tutui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech FRC¹, Tokyo Tech IGSSE²)

[28p-PB2-2] Synthesis and physical properties of Li₈SiN₄ as a cathode material of lithium secondary batteries.

^○（B）Taiki Yamashita¹, Shinichi Kuwano¹, Kazuo Kuriyama¹, Kazumasa Kushida² (Hosei Univ.¹, Osakakyoiku Univ.²)

[28p-PB2-3] Optical properties of Ba₈Ga₁₆Ge₃₀ clathrate

^○Syuhei Kojima¹, Motoharu Imai², Tetsuji Kume³, Katsumi Tanigaki⁴, Hiroyuki Taima⁵, Haruhiko Udono¹ (Ibaraki Univ.¹, NIMS², Gifu Univ.³, Tohoku Univ.⁴, ISSP⁵)

[28p-PB2-4] Characterization of powdered Si clathrate

^○Tamio Iida¹, Takato Sugiyama¹, Akifumi Yamada¹, Yusuke Mizoguchi¹, Hitoe Habuchi², Masashi Hattori³, Fumitaka Ohashi³, Tetsuji Kume³, Takayuki Ban³, Shuichi Nonomura³ (Gifu Nat. Cal. Tech.¹, Toyota Nat. Cal. Tech.², Gifu Univ.³)

[28p-PB2-5] Characterization of junctions and grains in BaSi₂ thin film grown on Si(111) substrate by probe-EBIC technique

^○（P）Kentaro Watanabe^1,2, Masakazu Baba¹, Takashi Sekiguchi^1,2, Hisanori Yamane³, Takashi Suemasu¹ (Univ. of Tsukuba¹, NIMS², Tohoku Univ.³)

[28p-PB2-6] Crystal growth of BaSi₂ films on Si(111)/Al/Glass structure for photoresponse measurements

^○Ryohei Numata¹, Kaoru Toko¹, Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. of Tsukuba¹, Tohoku Univ.², JST-CREST³)

[28p-PB2-7] Optical characterization of Mg₂Si pn-junction diode

^○Masaaki Takezaki¹, Yusuke Yamanaka¹, Masahito Uchikoshi², Haruhiko Udono¹ (Ibaraki Univ.¹, IMRAM, Tohoku Univ.²)

[28p-PB2-8] A convenient synthesis method for Mg₂Si crystals

^○Kaoru Kambe¹, Haruhiko Udono¹ (Ibaraki Univ.¹)

[28p-PB2-9] Effect of impurity co-doping in melt grown Mg₂Si crystals

^○Shin Hasunuma¹, Daisuke Ishida¹, Yukihiro Isoda², Haruhiko Udono¹ (Ibaraki Univ.¹, NIMS²)

[28p-PB2-10] Solution Growth and Optical Characterization of MnSi_1.7

^○Masaru Iioka¹, Daisuke Ishida¹, Shuhei Kojima¹, Haruhiko Udono¹ (Ibaraki Univ.¹)

Regular sessions(Oral presentation)

[29p-G7-1~19] 14.1 Physical properties of exploratory materials

Fri. Mar 29, 2013 1:00 PM - 6:00 PM G7 (B5 2F-2201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-G7-1] Evaluation of diffusion coefficients of impurities in MBE-grown BaSi₂ epitaxial layers

^○Kotaro Nakamura¹, Masakazu Baba¹, Khan M. Ajmal¹, Weijie Du¹, Noritaka Usami², Kosuke Hara², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys., Univ. of Tsukuba¹, IMR, Univ. of Tohoku², CREST JST³)

[29p-G7-2] Evaluation of diffusion coefficients of Group V elements in MBE-grown BaSi₂ epilayers

^○Ning Zhang¹, Kotaro Nakamura¹, Masakazu Baba¹, M.Ajmal Khan¹, Weijie Du¹, Shintaro Koike¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Inst. of Appl. Phys., Univ. of Tsukuba¹, CREST JST²)

[29p-G7-3] Fabrication and characterizations of P-doped n-type BaSi₂ epitaxial films grown by MBE

^○Ryota Takabe¹, Masakazu Baba¹, Kotaro Nakamura¹, ajmal Khan¹, Weijie Du¹, Shintaro Koike¹, Kaoru Toko¹, Kosuke Hara², Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. Tsukuba¹, Univ. Tohoku², JST-CREST³)

[29p-G7-4] Prediction of Interstitial Compounds of BaSi₂ with Lighter Elements

^○Yoji Imai^1,2, Mitsugu Souma¹, Takashi Suemasu² (AIST¹, Univ.Tsukuba²)

[29p-G7-5] Investigation of grain boundary character in BaSi₂ epitaxial thin-films

^○Masakazu Baba¹, Kotaro Nakamura¹, Weijie Du¹, Khan M. Ajimal¹, Kaoru Toko¹, Sadahiro Turekawa², Kosuke Hara³, Noritaka Usami^{3, 4}, Takashi Suemasu^{1, 4} (Univ. Tsukuba¹, Univ. Kumamoto², Univ. Tohoku³, JST-CREST⁴)

[29p-G7-6] Excess-Carrier Lifetime in Annealed BaSi₂ Epitaxial Films

^○（PC）Kosuke Hara^1,2, Noritaka Usami^1,2, Kotaro Nakamura³, Ryouta Takabe³, Masakazu Baba³, Kaoru Toko³, Takashi Suemasu^2,3 (Tohoku Univ.¹, JST-CREST², Univ. of Tsukuba³)

[29p-G7-7] Characterization of photoresponse properties of BaSi₂ epitaxial films on Si(001)

^○Shintaro Koike¹, Masakazu Baba¹, Koutaro Nakamura¹, K.M. Ajamal¹, Weijie Du¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Inst. of Appl. Phys., Univ. of Tsukuba¹, JST-CREST²)

[29p-G7-8] Evaluation of optical properties of anti-reflection AZO/BaSi₂/Si(111) structure

^○Naoya Shimada¹, Masakazu Baba¹, Takahiro Yoneyama¹, Koutaro Nakamura¹, Shintaro Koike¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Univ. Tsukuba¹, JST-CREST²)

[29p-G7-9] Formation of BaSi₂ films by RF sputtering method on a heated substrate

^○Nurul Amal Abdul Latiff¹, Takahiro Yoneyama¹, Tetsuo Shibutami², Keitaro Matsumaru², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys., Univ. Tsukuba¹, Tosoh Corporation², JST-CREST³)

[29p-G7-9.1] Break(15min)

[29p-G7-10] HEPES study of Fe₃Si/Ge heterostructure

Hiroya HiMatsumoto¹, Shinya Yamada², Kenji Kasahara², Kohei Hamaya², Kentarou Sawano¹, Masanobu Miyao², ^○Hiroshi Nohira¹ (Tokyo City University¹, Kyushu University²)

[29p-G7-11] First Principles Study of the Relation between Schottky-barrier Change and Interface Structures at Fe₃Si/Ge Interfaces

^○（DC）Kyosuke Kobinata¹, Takashi Nakayama¹ (Chiba Univ.¹)

[29p-G7-12] Crystal Growth β-FeSi₂ film by MOCVD method on Si(100) with Ag layer

^○Kensuke Akiyama^1,2, Ryo Takahashi¹, Yoshihisa Matsumoto¹, Hiroshi Funakubo², Masaru Itakura³ (Kanagawa Ind. Tech. Cent.¹, Tokyo Inst. Tech.², Kyusyu Univ.³)

[29p-G7-13] △Microstructure analysis of β-FeSi₂ film by MOCVD method on Si with Ag layer

^○Shunichi Motomura¹, Kouhei Hayashi¹, Masaru Itakura¹, Kensuke Akiyama² (Kyushu University¹, Kanagawa Ind. Tech Center²)

[29p-G7-14] Photoluminescence property of β-FeSi₂ nanocrystalsnanocrystals：Evaluation of phonon coupling

^○Yoshihito Maeda¹ (Kyutech¹)

[29p-G7-15] ▲Growth and structural property of MnSi_1.7 bulk crystals by molten salt method

^○（DC）Wen Li¹, Erchao Meng¹, Tomoji Matsushita², Shingo Oda², Daisuke Ishikawa², Kaito Nakane², Hirokazu Tatsuoka³ (Shizuoka Univ.¹, Shizuoka Univ.², Shizuoka Univ.³)

[29p-G7-16] Reduction of Oxygen in Noble Gas - Silicon Mixture Films II

^○Ryuji Okumura¹, Hitoe Habuchi², Shiori Fujita¹, Tamio Iida¹, Fumitaka Ohashi³, Tetsuji Kume³, Takayuki Ban³, Syuichi Nonomura³ (Gifu Natl. Coll. Technol¹, Toyota Natl. Coll. Technol², Gifu Univ³)

[29p-G7-17] Carbon Nanotube-Doped Magnesium Oxide Thin Films for photon energy

^○Takuya Nakagawa¹, Hideki Yoshioka², S.-I. Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

[29p-G7-18] Synthesis and structural analysis of new layered carbon nitride material

^○Masaya Sougawa¹, Kenta Kametomo¹, Kenichi Takarabe¹, Daisuke Yamazaki² (Okayama University of Science¹, ISEI²)

[29p-G7-19] Optical properties of a new layered carbon nitride material by high temperature and high pressure processing of nano carbon nitride

^○Kenta Kametomo¹, Masaya Sougawa¹, Ken-ichi Takarabe¹ (Okayama Univ. of Sci.¹)

Regular sessions(Oral presentation)

[30a-G7-1~10] 14.1 Physical properties of exploratory materials

Sat. Mar 30, 2013 9:00 AM - 11:45 AM G7 (B5 2F-2201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[30a-G7-1] Synthesis of Mg2Si by annealing of sputter-deposited Mg film on Si in Ar gas atmosphere

^○Takashi Ikehata¹, Tatsuya Ando¹, Takuya Yamamoto¹, Yuta Takagi¹, Naoyuki Sato¹, Haruhiko Udono¹ (Ibaraki Univ.¹)

[30a-G7-2] Preparation of epitaxial Mg₂Si films by sputtering method

^○Atsuo Katagiri¹, Shota Ogawa¹, Masaaki Matsushima¹, Kensuke Akiyama^1,2, Hiroshi Funakubo¹ (Tokyo Tech¹, Kanagawaken Industrial Technology Center²)

[30a-G7-3] Characterization of Mg₂Si films prepared by sputtering method

^○Shota Ogawa¹, Atsuo Katagiri¹, Masaaki Matsushima¹, Kensuke Akiyama^1,2, Hiroshi Funakubo¹ (Tokyo Inst. of Tech.¹, Kanagawa Inds. Tech. Cent.²)

[30a-G7-4] △Fabrication and characterization of amorphous Mg₂Si-based semiconductors by sputtering method

^○Shota Hara¹, Takashi Kato¹, Nobuyuki Matsuki¹, Hiroyuki Fujiwara¹ (Gifu Univ.¹)

[30a-G7-5] Preparation, crystal structures and electrical properties of Na₂Mg₃X₂ (X = Sn, Pb)

^○Ryo Ishiyama¹, Takahiro Yamada¹, Hisanori Yamene¹ (IMRAM Tohoku Univ.¹)

[30a-G7-6] Crystal Growth and Optical Properties of Lu_2(x-1)Tb_2xO₃ Mixed Crystals

^○Yutaro Chibana¹, Nozomu Ishiwaka¹, Hisaya Oda¹, Hiromine Naruse¹, Akio Yamanaka¹ (Chitose Institute of Science and Technology¹)

[30a-G7-6.1] Break(15min)

[30a-G7-7] First-principle study of the carrier activation ratio in F-doped anatase TiO₂ system and the thermodynamic analysis of the formation of TiOF₂ phase

^○Hideyuki Kamisaka¹, Nanako Mizuguchi², Koichi Yamashita², Tetsuya Hasegawa¹ (The Univ. of Tokyo¹, The Univ. of Tokyo²)

[30a-G7-8] Method for Predicting Surface Segregation Under Oxygen Atmosphere

^○Michiko Yoshitake¹ (National Inst. Materials Sci.¹)

[30a-G7-9] Annealing Time Dependent Contact Resistance of TiSi₂ Electrode for AlGaN/GaN structure

^○Mari Okamoto¹ (Tokyo Inst.¹)

[30a-G7-10] Imaging of photo-carrier dynamics in semiconductors

^○Keiki Fukumoto^1,2, Yuuki Yamada¹, Ken Onda^1,3, Shin-ya Koshihara^1,2 (Titech¹, JST-CREST², JST-PRESTO³)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[28p-PB2-1~10] 14.1 Physical properties of exploratory materials

[29p-G7-1~19] 14.1 Physical properties of exploratory materials

[30a-G7-1~10] 14.1 Physical properties of exploratory materials