The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[30a-G7-1~10] 14.1 Physical properties of exploratory materials

Sat. Mar 30, 2013 9:00 AM - 11:45 AM G7 (B5 2F-2201)

[30a-G7-4] △Fabrication and characterization of amorphous Mg2Si-based semiconductors by sputtering method

○Shota Hara1, Takashi Kato1, Nobuyuki Matsuki1, Hiroyuki Fujiwara1 (Gifu Univ.1)

Keywords:半導体、Mg2Si、スパッタリング