[29p-G9-1~7] 13.6 Silicon devices / Integration technology

[29p-G9-6] △Observation of few-electrons in a silicon double quantum dot by a charge detector

^○Kosuke Horibe¹, Tetsuo Kodera^1,2,3, Tomohiro Kambara¹, Yukio Kawano⁴, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, the Univ. of Tokyo², PRESTO-JST³, Dept. of Phys. Elec., Tokyo Tech.⁴)

Keywords:量子ドット、シリコン、量子情報