The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Poster presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[29p-PA2-1~10] 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PA2 (1st gymnasium)

[29p-PA2-5] DC/pulse characteristics in AlGaN /GaN HEMTs on semi-insulating GaN substrate

Takuma Nanjo1, Akifumi Imai1, Yosuke Suzuki1, Hiroyuki Okazaki1, Muneyoshi Suita1, Marika Nakamura1, Eiji Yagyu1, Hiroshi Ohji1 (Mitsubishi Electric.1)

Keywords:GaN