[29p-PA2-1~10] 14.3 Electron devices and Process technology

[29p-PA2-6] Evaluation of radiated emission noise of GaN-HEMT switching circuit

^○Toshihide Ide¹, Ryousaku Kaji¹, Mitsuaki Shimizu¹, Kenji Mizutani², Hiroaki Ueno², Nobuyuki Otsuka², Tetsuzo Ueda², Tsuyoshi Tanaka² (AIST ADPERC¹, Panasonic²)

Keywords:GaN、HEMT、ノイズ